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Typical Characteristics
100
3
80
60
V GS =10V
6.0V
4.5V
4.0V
3.5V
2.8
2.6
2.4
2.2
V GS = 3.0V
2
1.8
40
1.6
1.4
3.5V
4.0V
20
3.0V
1.2
4.5V
6.0V
1
10V
0
0.8
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
1.6
1.4
V D S , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D = 66A
V GS = 10V
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.02
I D = 33A
0.0175
0.015
1.2
T A = 125 C
1
0.0125
0.01
o
T A = 25 C
0.8
0.6
0.0075
0.005
o
-50
-25
0 25 50 75 100
T J , JUNCTION TEMPERATURE ( o C)
125
150
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
90
80
70
Figure 3. On-Resistance Variation
withTemperature
V DS = 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
V GS = 0V
100
T A = 125 C
60
10
o
25
50
1
o
T A =125 C
-55 C
-55 C
40
30
o
o
0.1
0.01
C
o
20
25 C
10
0
o
0.001
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6670A Rev. E1(W)
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相关代理商/技术参数
FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes
FDD6670A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 66A, TO-252
FDD6670A_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDD6670A_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD6670A_Q 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6670AL 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6670AL_M 制造商:Fairchild 功能描述:0V/16V, 8/10MO, NCH, SINGLE, TO252
FDD6670AL_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: